Magnetron Sputtering Deposition in Magnetic Recording Industry
Applications
| Applications | Specific Purpose | Material Type |
| Magnetic recording | Vertical magnetic recording film | CoCr |
| Film for hard disk | CoCrTa, CoCrPt, CoCrTaPt | |
|
Thin film magnetic head |
CoTaZr, CoCrZr | |
| Artificial crystal film | CoPt, CoPd |
Working Principle
Magnetron sputtering is to form an orthogonal EM field above the cathode target surface. After the secondary
electrons generated from sputtering are accelerated to be high energy electrons in the cathode fall region, they
do not directly fly to the anode but oscillate back and forth which is similar to cycloid under the action of orthogonal
EM field. High energy electrons constantly collide with gas molecules and transfer energy to the latter, ionizing them
into low energy electrons. These low energy electrons eventually drift along the magnetic line of force to the auxiliary
anode near the cathode and then are absorbed, avoiding the strong bombardment from high-energy electrons to polar
plate and eliminating the damages to the polar plate caused by the bombardment heating and electron irradiation in
secondary sputtering, which reflects the “low temperature” characteristic of the polar plate in magnetron sputtering.
The complex motions of electrons increase the ionization rate and realize high-speed sputtering due to the existence
of magnetic field.
Features
| Model | MSC-MR-X—X |
| Coating type | Various dielectric films such as metal film, metal oxide and AIN |
| Coating temperature range | Normal temperature to 500℃ |
| Coating vacuum chamber size | 700mm*750mm*700mm (Customizable) |
| Background vacuum | < 5×10-7mbar |
| Coating thickness | ≥ 10nm |
| Thickness control precision | ≤ ±3% |
| Maximum coating size | ≥ 100mm (Customizable) |
| Film thickness uniformity | ≤ ±0.5% |
| Substrate carrier | With planetary rotation mechanism |
| Target material | 4×4 inches(compatible with 4 inches and below) |
| Power supply | The power supplies such as DC, pulse, RF, IF and bias are optional |
| Process gas | Ar, N2, O2 |
| Note: Customized production available. | |
Coating Sample
Process Steps
→ Place the substrate for coating into the vacuum chamber;
→ Vacuumize the vacuum chamber at high and low temperature, and rotate the substrate synchronously;
→ Start coating: the substrate is contacted with precursor in sequence and without simultaneous reaction;
→ Purge it with high-purity nitrogen gas after each reaction;
→ Stop rotating the substrate after the film thickness is up to standard and the operation of purging and cooling is
completed, then take out the substrate after the vacuum breaking conditions are met.
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