Atomic Layer Deposition in Protective Coating Field
Applications
| Applications | Specific Purpose |
| Protective coating | Corrosion-resistant coating |
| Seal coating |
Working Principle
In a traditional CVD process, the gas-phase precursors will continuously or at least partially react. In the ALD
process, however, the reactions only occur on the substrate surface. It is a cyclic process consisting of multiple
partial reactions, that is, the substrate contacts with precursors in sequence and reacts asynchronously. At any
given time, only parts of the reactions occur on the substrate surface. These different reaction steps are self-limiting,
that is, the compounds on the surface only can be prepared from precursors suitable for film growth. Partial reactions
are completed when the spontaneous reactions no longer occur. The process chamber will be purged and/or emptied
by inert gas among different reaction steps in order to remove all the pollutants generated by precursor molecules in
the previous processes.
Features
| Model | ALD-PC-X—X |
| Coating film system | AL2O3, TiO2, ZnO, etc |
| Coating temperature range | Normal temperature to 500℃ (Customizable) |
| Coating vacuum chamber size | Inner diameter: 1200mm, Height: 500mm (Customizable) |
| Vacuum chamber structure | According to customer’s requirements |
| Background vacuum | <5×10-7mbar |
| Coating thickness | ≥0.15nm |
| Thickness control precision | ±0.1nm |
| Coating size | 200×200mm² / 400×400mm² / 1200×1200 mm², etc |
| Film thickness uniformity | ≤±0.5% |
| Precursor and carrier gas | Trimethylaluminum, titanium tetrachloride, diethyl zinc, pure water, |
| Note: Customized production available. | |
Coating Samples
Process Steps
→ Place the substrate for coating into the vacuum chamber;
→ Vacuumize the vacuum chamber at high and low temperature, and rotate the substrate synchronously;
→ Start coating: the substrate is contacted with precursor in sequence and without simultaneous reaction;
→ Purge it with high-purity nitrogen gas after each reaction;
→ Stop rotating the substrate after the film thickness is up to standard and the operation of purging and cooling is
completed, then take out the substrate after the vacuum breaking conditions are met.
Our Advantages
We are manufacturer.
Mature process.
Reply within 24 working hours.
Our ISO Certification
Parts Of Our Patents
Parts Of Our Awards and Qualifications of R&D
Our products are sold all over the world, you can rest assured.
