Atomic Layer Deposition in Separation Membrane field
Applications
Applications | Specific Purpose |
Separation membrane |
Filtration |
Gas separation |
Working Principle
Atomic layer deposition (ALD) has the following advantages due to the surface saturation chemisorption and
self-limiting reaction mechanism:
1. Accurately control the film thickness by controlling the cycle numbers;
2. Due to the mechanism of surface saturation, there is no need to control the uniformity of precursor flow;
3. High uniform films can be generated;
4. Excellent step coverage with high aspect ratio.
Features
Model | ALD-SM-X—X |
Coating film system | AL2O3, TiO2, ZnO, etc |
Coating temperature range | Normal temperature to 500℃ (Customizable) |
Coating vacuum chamber size |
Inner diameter: 1200mm, Height: 500mm (Customizable) |
Vacuum chamber structure | According to customer’s requirements |
Background vacuum | <5×10-7mbar |
Coating thickness | ≥0.15nm |
Thickness control precision | ±0.1nm |
Coating size | 200×200mm² / 400×400mm² / 1200×1200 mm², etc |
Film thickness uniformity | ≤±0.5% |
Precursor and carrier gas |
Trimethylaluminum, titanium tetrachloride, diethyl zinc, pure water, nitrogen, etc. |
Note: Customized production available. |
Coating Samples
Process Steps
→ Place the substrate for coating into the vacuum chamber;
→ Vacuumize the vacuum chamber at high and low temperature, and rotate the substrate synchronously;
→ Start coating: the substrate is contacted with precursor in sequence and without simultaneous reaction;
→ Purge it with high-purity nitrogen gas after each reaction;
→ Stop rotating the substrate after the film thickness is up to standard and the operation of purging and cooling is
completed, then take out the substrate after the vacuum breaking conditions are met.
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