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Separation Membrane Field Filtration Atomic Layer Deposition ALD Machine

Separation Membrane Field Filtration Atomic Layer Deposition ALD Machine

  • High Light

    Separation Membrane field Atomic Layer Deposition

    ,

    Separation Membrane field ald machine

    ,

    Filtration ald machine

  • Weight
    Customizable
  • Size
    Customizable
  • Guarantee Period
    1 Year Or Case By Case
  • Customizable
    Available
  • Shipping Terms
    By Sea / Air / Multimodal Transport
  • Place of Origin
    Chengdu, P.R.CHINA
  • Brand Name
    ZEIT
  • Certification
    Case by case
  • Model Number
    ALD-SM-X—X
  • Minimum Order Quantity
    1set
  • Price
    Case by case
  • Packaging Details
    Wooden case
  • Delivery Time
    Case by case
  • Payment Terms
    T/T
  • Supply Ability
    Case by case

Separation Membrane Field Filtration Atomic Layer Deposition ALD Machine

Atomic Layer Deposition in Separation Membrane field

 

 

Applications

     Applications      Specific Purpose
     Separation membrane

     Filtration

     Gas separation

 

Working Principle
Atomic layer deposition (ALD) has the following advantages due to the surface saturation chemisorption and

self-limiting reaction mechanism:
1. Accurately control the film thickness by controlling the cycle numbers;
2. Due to the mechanism of surface saturation, there is no need to control the uniformity of precursor flow;
3. High uniform films can be generated;
4. Excellent step coverage with high aspect ratio.

 

Features

     Model       ALD-SM-X—X
     Coating film system       AL2O3, TiO2, ZnO, etc
     Coating temperature range       Normal temperature to 500℃ (Customizable)
     Coating vacuum chamber size

      Inner diameter: 1200mm, Height: 500mm (Customizable)

     Vacuum chamber structure       According to customer’s requirements
     Background vacuum       <5×10-7mbar
     Coating thickness       ≥0.15nm
     Thickness control precision       ±0.1nm
     Coating size       200×200mm² / 400×400mm² / 1200×1200 mm², etc
     Film thickness uniformity       ≤±0.5%
     Precursor and carrier gas

      Trimethylaluminum, titanium tetrachloride, diethyl zinc, pure water,

       nitrogen, etc.

     Note: Customized production available.

                                                                                                                

Coating Samples

Separation Membrane Field Filtration Atomic Layer Deposition ALD Machine 0Separation Membrane Field Filtration Atomic Layer Deposition ALD Machine 1

 

Process Steps
→ Place the substrate for coating into the vacuum chamber;
→ Vacuumize the vacuum chamber at high and low temperature, and rotate the substrate synchronously;
→ Start coating: the substrate is contacted with precursor in sequence and without simultaneous reaction;
→ Purge it with high-purity nitrogen gas after each reaction;
→ Stop rotating the substrate after the film thickness is up to standard and the operation of purging and cooling is

     completed, then take out the substrate after the vacuum breaking conditions are met.

 

Our Advantages

We are manufacturer.

Mature process.

Reply within 24 working hours.

 

Our ISO Certification

Separation Membrane Field Filtration Atomic Layer Deposition ALD Machine 2

 

 

Parts Of Our Patents

Separation Membrane Field Filtration Atomic Layer Deposition ALD Machine 3Separation Membrane Field Filtration Atomic Layer Deposition ALD Machine 4

 

 

Parts Of Our Awards and Qualifications of R&D

Separation Membrane Field Filtration Atomic Layer Deposition ALD Machine 5Separation Membrane Field Filtration Atomic Layer Deposition ALD Machine 6