Atomic Layer Deposition in Sensor Industry
Applications
| Applications | Specific Purpose |
|
Sensor |
Gas sensor |
| Humidity sensor | |
| Biosensor |
Working Principle
A basic atomic layer deposition cycle consists of four steps:
1. The first precursor will be guided to the substrate surface, and the chemisorption process will automatically
terminate when the surface is saturated;
2. Inert gases Ar or N2 and by-products, flush the excess first precursor away;
3. The second precursor is injected and reacts with the first precursor chemisorbed on the substrate surface to
form the desired film. The reaction process is terminated until the reaction of the first precursor adsorbed on
the substrate surface is completed. The second precursor is injected, and the excess precursor is flushed
away;
4. Inert gases such as Ar or N2 and by-products.
This reaction processis called a cycle: injection and flushing of the first precursor, injection and flushing of the
second precursor. The time required for a cycle is the sum of the injection time of the first and second precursors
plus the two flushing times. Therefore, the total reaction time is the number of cycles multiplied by the cycle time.
Features
| Model | ALD-SEN-X—X |
| Coating film system | AL2O3, TiO2, ZnO, etc |
| Coating temperature range | Normal temperature to 500℃ (Customizable) |
| Coating vacuum chamber size |
Inner diameter: 1200mm, Height: 500mm (Customizable) |
| Vacuum chamber structure | According to customer’s requirements |
| Background vacuum | <5×10-7mbar |
| Coating thickness | ≥0.15nm |
| Thickness control precision | ±0.1nm |
| Coating size | 200×200mm² / 400×400mm² / 1200×1200 mm², etc |
| Film thickness uniformity | ≤±0.5% |
| Precursor and carrier gas |
Trimethylaluminum, titanium tetrachloride, diethyl zinc,pure water, |
| Note: Customized production available. | |
Coating Samples
Process Steps
→ Place the substrate for coating into the vacuum chamber;
→ Vacuumize the vacuum chamber at high and low temperature, and rotate the substrate synchronously;
→ Start coating: the substrate is contacted with precursor in sequence and without simultaneous reaction;
→ Purge it with high-purity nitrogen gas after each reaction;
→ Stop rotating the substrate after the film thickness is up to standard and the operation of purging and cooling is
completed, then take out the substrate after the vacuum breaking conditions are met.
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